Alkylsilyl Compounds of Selenium and Tellurium: New Precursors for ALD

Abstract

Several alkylsilyl compounds of selenium and tellurium were synthesized and characterized. Crystal structures of (tBuMe2Si)2Se and (tBuMe2Si)2Te were solved. Thermal properties of the compounds were studied with TGA. It was found that these compounds are very volatile and thermally stable therefore suitable ALD precursors. Reactivity of the compounds was preliminarily studied by mixing the compounds with different metal precursors in solution. It was found that the compounds are highly reactive against many metal halides and other metal compounds. They have also been tested successfully in ALD. For Ge2Sb2Te5 low growth temperature (60-90 oC) was found the most suitable while ZnSe and ZnTe films were grown at 400 {degree sign}C.