High Performance InAlN/GaN/Si High Electron Mobility Transistor Using Microwave Ohmic Annealing Technique
Author:
Funder
Ministry of Science and Technology, Taiwan (MOST)
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Power electronics on InAlN/(In)GaN: Prospect for a record performance
2. Fully Passivated AlInN/GaN HEMTs With $f_{\rm T}/f_{\rm MAX}$ of 205/220 GHz
3. Gate-lag and drain-lag effects in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs
4. Indium segregation in AlInN/AlN/GaN heterostructures
5. Trap states in InAlN/AlN/GaN-based double-channel high electron mobility transistors
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1. Recent progress of indium-bearing group-III nitrides and devices: a review;Optical and Quantum Electronics;2024-09-12
2. Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications;Chinese Physics B;2023-11-01
3. Improving performance of Al2O3/AlN/GaN MOSC-HEMTs via microwave annealing;Applied Surface Science;2021-12
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