Trap states in InAlN/AlN/GaN-based double-channel high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4802431
Reference22 articles.
1. InAlN/GaN HEMTs: a first insight into technological optimization
2. Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors
3. Leakage current by Frenkel–Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures
4. Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor
5. Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis
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1. Influence of Upper Channel Layer Thickness on Traps in Double-Channel InAlN/GaN HEMTs;2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2023-11-13
2. Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—Experimental evidence of the hole trap state;Applied Physics Letters;2023-08-28
3. Investigation of trapping effects in Schottky lightly doped P-GaN gate stack under γ-ray irradiation;Applied Physics Letters;2022-10-03
4. Physical analysis of normally-off ALD Al2O3/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique;Chinese Physics B;2022-09-01
5. Characterization of trap states in AlN/GaN superlattice channel high electron mobility transistors under total-ionizing-dose with 60Co γ-irradiation;Applied Physics Letters;2022-05-16
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