Negative Bias and Illumination Stress Induced Electron Trapping at Back-Channel Interface of InGaZnO Thin-Film Transistor
Author:
Publisher
The Electrochemical Society
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by 49 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comparative analysis on negative-bias-illumination-stress instabilities between planar- and vertical-channel thin-film transistors using InGaZnO active channels prepared by atomic-layer deposition;Materials Science in Semiconductor Processing;2024-10
2. Abnormal Positive Shift of Threshold Voltage in Praseodymium-Doped InZnO-TFTs Under Negative Bias Illumination Temperature Stress;IEEE Transactions on Electron Devices;2024-03
3. Reliable measurement of the density of states including occupied in-gap states of an amorphous In–Ga–Zn–O thin film via photoemission spectroscopies: Direct observation of light-induced in-gap states;Journal of Applied Physics;2024-02-23
4. Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress;IEEE Journal of the Electron Devices Society;2024
5. Designing buried-gate InGaZnO transistors for high-yield and reliable switching characteristics;Journal of Materials Chemistry C;2024
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