Correlation of Threading Dislocations with the Electron Concentration and Mobility in InN Heteroepitaxial Layers Grown by MBE
Author:
Funder
H2020 European Research Infrastructure NFFA-Europe
project
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference42 articles.
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4. Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy
5. Plasma-assisted MBE growth and characterization of InN on sapphire
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2. Probing the charge state of threading dislocations in indium nitride through advanced atomic force microscopy;Materials Characterization;2023-11
3. Optical, surface, and structural studies of InN thin films grown on sapphire by molecular beam epitaxy;Journal of Vacuum Science & Technology A;2023-07-10
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