Plasma-assisted MBE growth and characterization of InN on sapphire
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. Optical band gap of indium nitride
2. Physical properties of InN with the band gap energy of 1.1eV
3. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
4. Unusual properties of the fundamental band gap of InN
5. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys
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2. Correlation of Threading Dislocations with the Electron Concentration and Mobility in InN Heteroepitaxial Layers Grown by MBE;ECS Journal of Solid State Science and Technology;2019-10-11
3. Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors;Scientific Reports;2018-07-26
4. Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen;Semiconductors;2017-12
5. Influence of MBE growth modes and conditions on spontaneous formation of metallic In nanoparticles and electrical properties of InN matrix;Journal of Crystal Growth;2017-11
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