Correlation of Postetch Residues to Deposition Temperature in Plasma Etched Aluminum Alloys-Reference-Cited by-同舟云学术

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Correlation of Postetch Residues to Deposition Temperature in Plasma Etched Aluminum Alloys

Published:1987-11-01 Issue:11 Volume:134 Page:2809-2814
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Abraham T.¹

Affiliation:

1. Northern Telecom Electronics Limited, Ottawa, Ontario, Canada K1Y 4H7

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2100293/pdf

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Morphology evolution in TiN/Al–0.5Cu/Ti interconnection during chamber long stay and post-deposition annealing correlated to defect formation in metallization processing;Microelectronic Engineering;2008-07

2. Metallization;Handbook of Semiconductor Interconnection Technology, Second Edition;2006-02-22

3. Dry Etching of Electronic Oxides, Polymers, and Semiconductors;Plasma Processes and Polymers;2005-01-12

4. Plasma Chemistry;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27

5. Reaction Characteristics between Cu Thin Film and RF Inductively Coupled Cl2Plasma without/with UV Irradiation;Japanese Journal of Applied Physics;1998-07-15

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