Morphology evolution in TiN/Al–0.5Cu/Ti interconnection during chamber long stay and post-deposition annealing correlated to defect formation in metallization processing-Reference-Cited by-同舟云学术

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Morphology evolution in TiN/Al–0.5Cu/Ti interconnection during chamber long stay and post-deposition annealing correlated to defect formation in metallization processing

Published:2008-07 Issue:7 Volume:85 Page:1502-1510
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Li Ming-Yen,Su Mei-Yun,Chang Te-Fu,Tsai Bin-Siang,Tsai Wen-Li,Wu Hsiao-Che,Chuang Poyo,Yang Tsung-Hsun,Yen Haw

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Reduction of Electromigration in Aluminum Films by Copper Doping

2. Defect generation and diffusion mechanisms in Al and Al–Cu

3. Dynamic precipitation processes of Al2Cu in Al‐Cu thin films byin situtransmission electron microscopy

4. Microcorrosion of Al–Cu and Al–Cu–Si alloys: Interaction of the metallization with subsequent aqueous photolithographic processing

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sputtering Targets and Thin Films for Integrated Circuits;Sputtering Materials for VLSI and Thin Film Devices;2014

2. Resistance switching of thin AlO and Cu-doped-AlO films;Thin Solid Films;2013-10

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