Reaction Characteristics between Cu Thin Film and RF Inductively Coupled Cl2Plasma without/with UV Irradiation

Author:

Kwon Myoung Seok,Lee Jeong Yong,Choi Kang-Sik,Han Chul-Hi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Process effects of copper film over a step etched with a plasma-based process;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-03

2. Surface Reactions in Microelectronics Process Technology;Annual Review of Chemical and Biomolecular Engineering;2011-07-15

3. Mechanistic considerations of low temperature hydrogen-based plasma etching of Cu;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-01

4. Temperature Effects and Optical Emission Spectroscopy Studies of Hydrogen-Based Plasma Etching of Copper;Journal of The Electrochemical Society;2011

5. Patterning of Cu Films by a Two-Step Plasma Etching Process at Low Temperature;Journal of The Electrochemical Society;2010

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