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Highly Selective Directional Atomic Layer Etching of Silicon

  • Published:2015 Issue:6 Volume:4 Page:N5010-N5012
  • ISSN:2162-8769
  • Container-title:ECS Journal of Solid State Science and Technology
  • language:en
  • Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Tan Samantha,Yang Wenbing,Kanarik Keren J.,Lill Thorsten,Vahedi Vahid,Marks Jeff,Gottscho Richard A.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Cited by 42 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma atomic layer etching of ruthenium by oxygen adsorption-removal cyclic process;Applied Surface Science;2024-10

2. Selective Atomic Layer Etching for Silicon Device Fabrication;2024 International Conference on Integrated Circuits, Communication, and Computing Systems (ICIC3S);2024-06-08

3. Future of plasma etching for microelectronics: Challenges and opportunities;Journal of Vacuum Science & Technology B;2024-06-07

4. In situ atom-resolved observation of Si (111) 7×7 surface with F radical and Ar ion irradiation simulated atomic layer etching;Journal of Vacuum Science & Technology A;2024-04-26

5. Quasi‐atomic layer etching of silicon with surface chlorination and removal using Ar or He plasmas;Plasma Processes and Polymers;2024-03-22
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