Multiple Self-Aligned Iron Nanowires by a Dual Selective Chemical Vapor Deposition Process-Reference-Cited by-同舟云学术

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Multiple Self-Aligned Iron Nanowires by a Dual Selective Chemical Vapor Deposition Process

Published:2007 Issue:9 Volume:10 Page:H251
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Bien Daniel C. S.,Bain Michael F.,Low Yee Hooi,Mitchell Neil S. J.,Armstrong Mervyn B.,Gamble Harold S.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference11 articles.

1. Growth kinetics and inhibition of growth of chemical vapor deposited thin tungsten films on silicon from tungsten hexafluoride

2. Mechanism of the reaction of WF6 and Si

3. Metal CVD for microelectronic applications: An examination of surface chemistry and kinetics

4. Fabrication of Self-Aligned Sub-100 nm Iron Wires by Selective Chemical Vapor Deposition

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemical Vapor Deposition of Aluminum Nanowires on Metal Substrates for Electrical Energy Storage Applications;ACS Nano;2011-12-21

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