Mechanism of the reaction of WF6 and Si-Reference-Cited by-同舟云学术

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Mechanism of the reaction of WF6 and Si

Published:1994-06 Issue:2 Volume:78 Page:123-132
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Groenen P.A.C.,Hölscher J.G.A.,Brongersma H.H.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference15 articles.

1. Selective Low Pressure Chemical Vapor Deposition of Tungsten

2. Tungsten chemical vapor deposition characteristics using SiH4 in a single wafer system

3. Selective chemical vapor deposition of tungsten using WF6and GeH4

4. Some considerations of the thermodynamics and kinetics of the chemical vapour deposition of tungsten

5. The WF6-Si reaction studied in situ by time-resolved mass spectrometry

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fermi-level depinning in Mo/Si junctions by insertion of amorphous Si-rich Mo silicide film formed via gas-phase reactions of MoF₆ with SiH₄;Japanese Journal of Applied Physics;2024-01-04

2. Gas-phase reactions of WF6 with SiH4 for deposition of WSi n films free from powder formation;Japanese Journal of Applied Physics;2019-03-14

3. Multiple Self-Aligned Iron Nanowires by a Dual Selective Chemical Vapor Deposition Process;Electrochemical and Solid-State Letters;2007

4. Fabrication of Self-Aligned Sub-100 nm Iron Wires by Selective Chemical Vapor Deposition;Electrochemical and Solid-State Letters;2006

5. Surface characterization of CVD tungsten coating on molybdenum substrate;Surface and Coatings Technology;2005-08

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