Frictional Characteristic of Polymeric Additive for the Slurry of Chemical Mechanical Planarization Process-Reference-Cited by-同舟云学术

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Frictional Characteristic of Polymeric Additive for the Slurry of Chemical Mechanical Planarization Process

Published:2012 Issue:3 Volume:1 Page:P101-P106
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Kim Hojoong,Yang Ji Chul,Lee Junwye,Park Sung Ha,Won Jehyung,Kim Mingu,Kim Taesung

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference26 articles.

1. A Tribochemical Study of Ceria-Silica Interactions for CMP

2. Surfactant Effect on Oxide-to-Nitride Removal Selectivity of Nano-abrasive Ceria Slurry for Chemical Mechanical Polishing

3. Ceria CMP Slurry for the Construction of Floating Gates in MLC NAND Flash Memory below 51 nm

4. Novel phosphate-functionalized silica-based dispersions for selectively polishing silicon nitride over silicon dioxide and polysilicon films

5. Reverse selectivity – High silicon nitride and low silicon dioxide removal rates using ceria abrasive-based dispersions

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synergy between dodecylbenzenesulfonic acid and isomeric alcohol polyoxyethylene ether for nano-scale scratch reduction in copper chemical mechanical polishing;Tribology International;2020-12

2. Model Friction Studies of Chemical Mechanical Planarization Using a Pin-on-Disk Tribometer;Tribology Letters;2019-06-24

3. Investigation of Copper Oxide Ring Formation during Post Chemical Mechanical Polishing Cleaning of Cu Interconnect;ECS Journal of Solid State Science and Technology;2017

4. Note: Evaluation of slurry particle size analyzers for chemical mechanical planarization process;Review of Scientific Instruments;2016-04

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