Deep Electron Traps Responsible for Higher Quantum Efficiency in Improved GaN/InGaN Light Emitting Diodes Embedded with SiO2Nanoparticles-Reference-Cited by-同舟云学术

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Deep Electron Traps Responsible for Higher Quantum Efficiency in Improved GaN/InGaN Light Emitting Diodes Embedded with SiO2Nanoparticles

Published:2016 Issue:10 Volume:5 Page:Q274-Q277
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Polyakov A. Y.,Smirnov N. B.,Yakimov E. B.,Cho Han-Su,Baek Jong Hyeob,Turutin A. V.,Shemerov I. V.,Kondratyev E. S.,Lee In-Hwan

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Solid-State Light Sources Getting Smart

2. Design Rule of Nanostructures in Light-Emitting Diodes for Complete Elimination of Total Internal Reflection

3. Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

4. Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

5. Design of patterned sapphire substrates for GaN-based light-emitting diodes

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Current-induced degradation behaviors of InGaN/GaN multiple quantum well UV photodetectors: Role of electrically active defects;Sensors and Actuators A: Physical;2022-11

2. Study of GaN/InGaN Light-Emitting Diodes with Specific Zirconium Oxide (ZrO₂) Layers;ECS Journal of Solid State Science and Technology;2022-07-01

3. Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers;Journal of Alloys and Compounds;2020-12

4. Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes;Journal of Applied Physics;2019-09-28

5. Deep trap analysis in green light emitting diodes: Problems and solutions;Journal of Applied Physics;2019-06-07

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