Microtrench Formation in Polysilicon Plasma Etching over Thin Gate Oxide-Reference-Cited by-同舟云学术

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Microtrench Formation in Polysilicon Plasma Etching over Thin Gate Oxide

Published:1993-08-01 Issue:8 Volume:140 Page:2395-2401
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Dalton T. J.¹²,Arnold J. C.¹²,Sawin H. H.¹²,Swan S.¹²,Corliss D.¹²

Affiliation:

1. Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

2. Digital Equipment Corporation, Hudson, Massachusetts 01749‐2809

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2220831/pdf

Cited by 65 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of time-modulation bias on polysilicon gate etching;Japanese Journal of Applied Physics;2023-05-18

2. Inert-gas ion scattering at grazing incidence on smooth and rough Si and SiO₂ surfaces;Journal of Vacuum Science & Technology A;2023-03

3. Modeling of SiN inner spacer deposition in gate-all-around nanosheet FET process;Advances in Patterning Materials and Processes XXXIX;2022-05-25

4. Formation mechanisms of etched feature profiles during Si etching in Cl2/O2 plasmas;Journal of Vacuum Science & Technology A;2019-09

5. Inductively coupled plasma nanoetching of atomic layer deposition alumina;Microelectronic Engineering;2018-06

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