Microtrench Formation in Polysilicon Plasma Etching over Thin Gate Oxide-Reference-Cited by-同舟云学术

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Microtrench Formation in Polysilicon Plasma Etching over Thin Gate Oxide

Published:1993-08-01 Issue:8 Volume:140 Page:2395-2401
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Dalton T. J.¹²,Arnold J. C.¹²,Sawin H. H.¹²,Swan S.¹²,Corliss D.¹²

Affiliation:

1. Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

2. Digital Equipment Corporation, Hudson, Massachusetts 01749‐2809

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2220831/pdf

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1. Nanoscale Pattern Transfer by Etching;Nanofabrication;2024

2. Effect of time-modulation bias on polysilicon gate etching;Japanese Journal of Applied Physics;2023-05-18

3. Inert-gas ion scattering at grazing incidence on smooth and rough Si and SiO₂ surfaces;Journal of Vacuum Science & Technology A;2023-03

4. Modeling of SiN inner spacer deposition in gate-all-around nanosheet FET process;Advances in Patterning Materials and Processes XXXIX;2022-05-25

5. Formation mechanisms of etched feature profiles during Si etching in Cl2/O2 plasmas;Journal of Vacuum Science & Technology A;2019-09

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