Boron Diffusion in Silicon‐on‐Insulator Structures Formed by Oxygen Implantation-Reference-Cited by-同舟云学术

Boron Diffusion in Silicon‐on‐Insulator Structures Formed by Oxygen Implantation

Published:1990-07-01 Issue:7 Volume:137 Page:2306-2313
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Normand P.¹²³,Tsoukalas D.¹²³,Guillemot N.¹²³,Stoemenos J.¹²³

Affiliation:

1. Institute of Microelectronics, National Research Center for Physical Sciences “Democritos,” Aghia Paraskevi 15310, Athens, Greece

2. Laboratoire de Physique des Composants à Semiconducteurs, UA‐CNRS 840, ENSERG, 38016 Grenoble Cedex, France

3. Physics Department, Aristotle University of Thessaloniki, Thessaloniki 54006, Greece

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2086932/pdf

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1. Optical properties of ion-implanted silicon and separation by implantation of oxygen silicon-on-insulator substrates in the infrared: Study of B+ and P2+ implantation doping;Thin Solid Films;2009-06

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