Communication—Effects of Oxygen Concentration Gradient on Resistive Switching Behavior in Oxygen Vacancy-Rich Electrodes-Reference-Cited by-同舟云学术

Communication—Effects of Oxygen Concentration Gradient on Resistive Switching Behavior in Oxygen Vacancy-Rich Electrodes

Published:2016 Issue:5 Volume:5 Page:Q115-Q118
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Pan Chih-Hung,Chang Kuan-Chang,Chang Ting-Chang,Tsai Tsung-Ming,Zhang Rui,Liang Shu-Ping,Lin Chih-Yang,Chen Min-Chen,Chen Po-Hsun,Syu Yong-En,Huang Hui-Chun,Sze Simon M.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Twin Thin-Film Transistor Nonvolatile Memory With an Indium–Gallium–Zinc–Oxide Floating Gate

2. Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

3. Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment

4. Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices

5. Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The enhanced electrode-dependent resistive random access memory based on BiFeO3;Applied Physics A;2023-04-10

2. Coexistence of Digital and Analog Resistive Switching With Low Operation Voltage in Oxygen-Gradient HfOx Memristors;IEEE Electron Device Letters;2019-07

3. Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium–Tin Oxide Insulator in Resistive Random Access Memory;IEEE Transactions on Electron Devices;2016-12

4. Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indium–Tin-Oxide Electrode;IEEE Transactions on Electron Devices;2016-12

5. Ultra-Low Switching Voltage Induced by Inserting SiO2Layer in Indium–Tin–Oxide-Based Resistance Random Access Memory;IEEE Electron Device Letters;2016-10