Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment-Reference-Cited by-同舟云学术

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Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment

Published:2013-05 Issue:5 Volume:34 Page:617-619
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chang Kuan-Chang,Chu Tian-Jian,Chen Jian-Yu,Su Yu-Ting,Jiang Jhao-Ping,Chen Kai-Huang,Huang Hui-Chun,Syu Yong-En,Gan Der-Shin,Sze Simon M.,Pan Chih-Hung,Chang Ting-Chang,Tsai Tsung-Ming,Zhang Rui,Lou Jen-Chung,Young Tai-Fa,Chen Jung-Hui,Shih Chih-Cheng

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6506844/06493386.pdf?arnumber=6493386

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3. Fabrication of All-GaN Integrated MIS-HEMTs with High Threshold Voltage Stability Using Supercritical Technology;Micromachines;2021-05-18

4. Low-temperature supercritical dehydroxylation for achieving an ultra-low subthreshold swing of thin-film transistors;Nanoscale;2021

5. Characterization and optimization of AlGaN/GaN metal-insulator semiconductor heterostructure field effect transistors using supercritical CO2/H2O technology*;Chinese Physics B;2020-12-01

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