Low-temperature supercritical dehydroxylation for achieving an ultra-low subthreshold swing of thin-film transistors-Reference-Cited by-同舟云学术

Low-temperature supercritical dehydroxylation for achieving an ultra-low subthreshold swing of thin-film transistors

Published:2021 Issue:11 Volume:13 Page:5700-5705
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Chang Kuan-Chang¹²³⁴⁵^ORCID,Hu Luodan¹²³⁴⁵,Qi Kang¹²³⁴⁵^ORCID,Li Lei¹²³⁴⁵^ORCID,Lin Xinnan¹²³⁴⁵,Zhang Shengdong¹²³⁴⁵,Wang Ziwen¹²³⁴⁵,Lai Ying-Chih⁶⁷⁸⁹,Liu Heng-Jui⁶⁷⁸⁹,Kuo Tze-Peng¹⁰¹¹¹²⁹¹³

Affiliation:

1. School of Electronic and Computer Engineering

2. Peking University

3. Shenzhen Graduate School

4. Shenzhen 518055

5. China

6. Department of Materials Science and Engineering

7. National Chung Hsing University

8. Taichung 40227

9. Taiwan

10. Department of Physics

11. National Sun Yat-sen University

12. Kaohsiung 804

13. Institute of Materials and Optoelectronics

Abstract

Ultra-low subthreshold swing was achieved in fabricated double-layer high-k dielectric thin-film transistors by means of low temperature supercritical dehydroxylation methodology.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D0NR08208B

Reference29 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Design and Mechanism of Embedding Specific Carbon Nanotubes in Sputtered Sandwiched InGaZnO Thin-Film Transistors