The enhanced electrode-dependent resistive random access memory based on BiFeO3
Author:
Funder
National Science and Technology Council
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
https://link.springer.com/content/pdf/10.1007/s00339-023-06619-9.pdf
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3. C.H. Pan, K.C. Chang, T.C. Chang, T.M. Tsai, R. Zhang, S.P. Liang, S.M. Sze, Communication—effects of oxygen concentration gradient on resistive switching behavior in oxygen vacancy-rich electrodes. ECS J. Solid State Sci. Technol. 5(5), Q115 (2016)
4. B. Mohammad, M.A. Jaoude, V. Kumar, D.M.A. Homouz, H.A. Nahla, M. Al-Qutayri, N. Christoforou, State of the art of metal oxide memristor devices. Nanotechnol. Rev. 5(3), 311–329 (2016)
5. F. Yuan, S. Shen, Z. Zhang, L. Pan, J. Xu, Interface-induced two-step RESET for filament-based multi-level resistive memory. Superlattices Microstruct. 91, 90–97 (2016)
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