Effects of RF Sputtering Parameters on C-axis Aligned Crystalline (CAAC) InGaZnO4Films Using Design of Experiment (DOE) Approach
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference42 articles.
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1. Optimization of Sputtering Parameters and Their Effect on Structural and Electrical Properties of CAAC-IGZO Thin-Film Transistors;Electronic Materials Letters;2023-11-23
2. Research progress on crystalline IGZO thin film transistor;Chinese Journal of Liquid Crystals and Displays;2023
3. Optical and electrical properties of room temperature prepared α-IGZO thin films using an In2Ga2ZnO7 ceramic target;Journal of Central South University;2022-04
4. Deposition, Characterization, and Performance of Spinel InGaZnO4;ACS Applied Electronic Materials;2022-02-23
5. Systematic Study on the Amorphous, C-Axis-Aligned Crystalline, and Protocrystalline Phases in In–Ga–Zn Oxide Thin-Film Transistors;ACS Applied Electronic Materials;2021-02-25
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