Highly Conformal Deposition of Pure Co Films by MOCVD Using Co[sub 2](CO)[sub 8] as a Precursor-Reference-Cited by-同舟云学术

Highly Conformal Deposition of Pure Co Films by MOCVD Using Co[sub 2](CO)[sub 8] as a Precursor

Published:2006 Issue:6 Volume:153 Page:G539
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Lee J.,Yang H. J.,Lee J. H.,Kim J. Y.,Nam W. J.,Shin H. J.,Ko Y. K.,Lee J. G.,Lee E. G.,Kim C. S.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference13 articles.

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2. M. W. Chase, C. A. Davies, J. R. Downey, D. J. Frurip, R. A. McDonald, and A. N. Syverud ,JANAF Thermochemical Tables, Vol. 14, p. 276, American Institute of Physics, New York (1985).

3. Epitaxial growth of CoSi2 on hydrogen-terminated Si(001)

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