Demonstration of a Reliable High Speed Phase-Change Memory Using Ge-Doped SbTe-Reference-Cited by-同舟云学术

Demonstration of a Reliable High Speed Phase-Change Memory Using Ge-Doped SbTe

Published:2009 Issue:7 Volume:156 Page:H612
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Lee Suyoun,Jeong Jeung-hyun,Wu Zhe,Park Young-Wook,Kim Won Mok,Cheong Byung-ki

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Phase-change memories

2. D. -H. Kang, J. -H. Lee, J. H. Kong, D. Ha, J. Yu, C. Y. Um, J. H. Park, F. Yeung, J. H. Kim, W. I. Park, et al. , in1998 Symposium on VLSI Technology Digest of Technical Papers, Vol. 98, 2008.

3. A Bipolar-Selected Phase Change Memory Featuring Multi-Level Cell Storage

4. Phase diagram of the ternary system Ge-Sb-Te

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