Surface-Tensile-Stress Induced Polishing-Voids Suppression via H2O2 Oxidizer Effect in Cross-Point Phase-Change-Memory-Cells-Reference-Cited by-同舟云学术

Surface-Tensile-Stress Induced Polishing-Voids Suppression via H2O2 Oxidizer Effect in Cross-Point Phase-Change-Memory-Cells

Published:2019 Issue:11 Volume:8 Page:P667-P672
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Kim Soo-Bum,Cui Hao,Cho Jong-Young,Seo Eun-Bin,Yun Sang-Su,Son Young-Hye,Jeong Gi-Ppeum,Bae Jae-Young,Park Jin-Hyung,Kang Sung-Goon,Park Jea-Gun^ORCID

Funder

Ministry of Trade, Industry and Energy

Brain Korea 21 plus program

National Research Foundation of Korea

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference27 articles.

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5. Demonstration of a Reliable High Speed Phase-Change Memory Using Ge-Doped SbTe

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1. The effect of slurry pH on the chemical mechanical planarization of a carbon-doped Ge₂Sb₂Te₅ phase change material;Journal of Materials Chemistry C;2022

2. Fenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge1Sb4Te5 Film Surface Chemical-Mechanical-Planarization;Applied Sciences;2021-11-17