Research on R-Plane Sapphire Substrate CMP Removal Rate Based on a New-Type Alkaline Slurry-Reference-Cited by-同舟云学术

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Research on R-Plane Sapphire Substrate CMP Removal Rate Based on a New-Type Alkaline Slurry

Published:2018 Issue:3 Volume:7 Page:P135-P141
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Zhao Xin,Niu Xinhuan,Yin Da,Wang Jianchao,Zhang Kai

Funder

Major National Science and Technology Special Projects

Natural Science Foundation of China

Natural Science Foundation of Hebei Province China

Natural Science Foundation of Tianjin China

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference38 articles.

1. A comparative study on the properties of c-plane and a-plane GaN epitaxial films grown on sapphire substrates by pulsed laser deposition

2. The Research of Reactivity between Nano-abrasives and Sapphire during Polishing Process

3. Niu Xinhuan Huang Yahuan Zhou Jianwei , 609–610, 130 (2014).

4. Nd 3+ -doped colloidal SiO 2 composite abrasives: Synthesis and the effects on chemical mechanical polishing (CMP) performances of sapphire wafers

5. Study on the processing characteristics of SiC and sapphire substrates polished by semi-fixed and fixed abrasive tools

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1. Nanomaterials and Equipment for Chemical–Mechanical Polishing of Single-Crystal Sapphire Wafers;Coatings;2023-12-14

2. The role of ammonium citrate and dodecyl pyridinium chloride on chemical mechanical polishing relevant to SiO2 dielectric layer;Journal of Manufacturing Processes;2023-12

3. Anti-crosstalk device based on a Novel Micro-LED structure design;Micro and Nanostructures;2023-10

4. Effects of Surfactants on the Chemical Mechanical Polishing Performance of a-Plane Sapphire Substrates;ECS Journal of Solid State Science and Technology;2023-09-01

5. Effects and mechanisms of different types of surfactants on sapphire ultrasonic polishing;Tribology International;2023-09

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