CVD and ALD Co(W) Films Using Amidinato Precursors as a Single-Layered Barrier/Liner for Next-Generation Cu-Interconnects-Reference-Cited by-同舟云学术

CVD and ALD Co(W) Films Using Amidinato Precursors as a Single-Layered Barrier/Liner for Next-Generation Cu-Interconnects

Published:2013 Issue:7 Volume:2 Page:P311-P315
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Shimizu Hideharu,Suzuki Yudai,Nogami Takeshi,Tajima Nobuo,Momose Takeshi,Kobayashi Yoshihiko,Shimogaki Yukihiro

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference46 articles.

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2. Structural and electrical properties of Ta and Ta nitrides deposited by chemical vapour deposition

3. Low temperature plasma-assisted chemical vapor deposition of tantalum nitride from tantalum pentabromide for copper metallization

4. Comparison of the diffusion barrier properties of chemical‐vapor‐deposited TaN and sputtered TaN between Cu and Si

5. Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition

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