Phosphorous Diffusion in N2+-Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering-Reference-Cited by-同舟云学术

Phosphorous Diffusion in N2+-Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering

Published:2017 Issue:7 Volume:6 Page:P418-P428
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Skarlatos D.,Ioannou-Sougleridis V.,Barozzi M.,Pepponi G.,Velessiotis D.,Skoulikidou M. C.,Vouroutzis N. Z.,Papagelis K.,Dimitrakis P.,Thomidis C.,Colombeau B.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference38 articles.

1. Defect engineering for shallow n-type junctions in germanium: Facts and fiction

2. Strategies for increased donor electrical activity in germanium (opto-) electronic materials: a review

3. Diffusion ofn-type dopants in germanium

4. Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results

5. Role of F on the Electrical Activation of As in Ge

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4. Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si1−xGex/Si epilayers;Applied Surface Science;2020-10

5. Semiconductor Applications;Flash Lamp Annealing;2019