Thermal Stability and Electrical Characterization of HfO[sub 2] Films on Thermally Nitrided Si-Reference-Cited by-同舟云学术

Thermal Stability and Electrical Characterization of HfO[sub 2] Films on Thermally Nitrided Si

Published:2004 Issue:6 Volume:151 Page:F153
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Bastos K. P.,Morais J.,Miotti L.,Soares G. V.,Pezzi R. P.,da Silva R. C. G.,Boudinov H.,Baumvol I. J. R.,Hegde R. I.,Tseng H.-H.,Tobin P. J.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Hafnium and zirconium silicates for advanced gate dielectrics

2. Self-Consistent Mosfet Tunneling Simulations—Trends in the Gate and Substrate Currents and the Drain-Current Turnaround Effect with Oxide Scaling

3. Atomic transport during growth of ultrathin dielectrics on silicon

4. Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO2 films annealed in O2

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Equivalent Oxide Thickness Reduction for High-k Gate Stacks by Optimized Rare-Earth Silicate Reactions;Electrochemical and Solid-State Letters;2009

2. Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al[sub 2]O[sub 3] Gate Dielectrics by CF[sub 4] Plasma Treatment;Journal of The Electrochemical Society;2008

3. Electrical Properties and Interfacial Characteristics of RuO[sub 2]∕HfAlO[sub x]∕SiON∕Si and RuO[sub 2]∕LaAlO[sub 3]∕SiON∕Si Capacitors;Journal of The Electrochemical Society;2008

4. Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma;Electrochemical and Solid-State Letters;2006-02-01

5. Oxygen-induced atomic desorptions in oxynitrides: Density functional calculations;Physical Review B;2005-11-10