Reduction in the Diameter of Contact Holes with a High Anisotropy and Aspect Ratio
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Characteristics of Very High-Aspect-Ratio Contact Hole Etching
2. Vertical Profile Control in Ultrahigh-Aspect-Ratio Contact Hole Etching with 0.05-µm-Diameter Range
3. Effects of CH[sub 2]F[sub 2] Addition on a High Aspect Ratio Contact Hole Etching in a C[sub 4]F[sub 6]/O[sub 2]/Ar Plasma
4. Highly Selective Etching of SiO2over Si3N4and Si in Capacitively Coupled Plasma Employing C5HF7Gas
5. Double patterning overlay budget for 45 nm technology node single and double mask approach
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Highly selective and vertical etch of silicon dioxide using ruthenium films as an etch mask;Journal of Vacuum Science & Technology A;2021-07
2. Pattern dependent profile distortion during plasma etching of high aspect ratio features in SiO2;Journal of Vacuum Science & Technology A;2020-03
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