Double patterning overlay budget for 45 nm technology node single and double mask approach
Author:
Publisher
American Vacuum Society
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Reduction in the Diameter of Contact Holes with a High Anisotropy and Aspect Ratio;ECS Journal of Solid State Science and Technology;2015
2. Fabrication of sub-100-nm metal-oxide-semiconductor field-effect transistors with asymmetrical source/drain using I-line double patterning technique;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-03
3. Layout Decomposition Approaches for Double Patterning Lithography;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2010-06
4. A simple method for sub-100nm pattern generation with I-line double-patterning technique;Microelectronics Reliability;2010-05
5. Toward the Design of a Sequential Two Photon Photoacid Generator for Double Exposure Photolithography;Chemistry of Materials;2008-11-24
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