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GaAs Enhancement-Mode MOSHEMT with Pt/ZrO[sub 2]/Ti/Au Composited Gate Structure

  • Published:2010 Issue:6 Volume:13 Page:H188
  • ISSN:1099-0062
  • Container-title:Electrochemical and Solid-State Letters
  • language:en
  • Short-container-title:Electrochem. Solid-State Lett.

Author:

Chiu Hsien-Chin,Chen Chao-Hung,Yang Chih-Wei,Lin Chao-Wei,Lin Che-Kai,Wang Cheng-Shun,Fu Jeffrey S.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of postdeposition annealing on TiO2/GaN/AlGaN/GaN/Si metal-oxide-semiconductor high-electron mobility transistors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-01

2. In0.53 Ga0.47 As MOS-HEMTs on GaAs and Si substrates grown by MOCVD;physica status solidi (a);2012-04-25
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