DC and RF characteristics of E-mode Ga/sub 0.51/In/sub 0.49/P-In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMTs-Reference-Cited by-同舟云学术

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DC and RF characteristics of E-mode Ga/sub 0.51/In/sub 0.49/P-In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMTs

Published:2003-03 Issue:3 Volume:24 Page:132-134
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Hsing-Yuan Tu ,Tao-Hsuan Chou ,Yo-Sheng Lin ,Hsien-Chin Chiu ,Ping-Yu Chen ,Wen-Chung Wu ,Shey-Shi Lu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/27076/01202504.pdf?arnumber=1202504

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved Low-Frequency Noise and Microwave Performance of Enhancement-Mode InGaP/InGaAs PHEMT with a Liquid-Phase Oxidized GaAs without a Gate Recess;ECS Solid State Letters;2012-12-05

2. Control of threshold voltage and improved subthreshold swing in enhancement-mode InGaP/InGaAs metal–oxide–semiconductor pseudomorphic high-electron-mobility transistor;Solid-State Electronics;2011-03

3. GaAs Enhancement-Mode MOSHEMT with Pt/ZrO[sub 2]/Ti/Au Composited Gate Structure;Electrochemical and Solid-State Letters;2010

4. Microwave complementary doped-channel field-effect transistors;Superlattices and Microstructures;2009-01

5. Characteristics of Dual δ-Doped InGaP∕InGaAs pHEMTs with Various Doping Profiles;Journal of The Electrochemical Society;2009

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