Plasma Enhanced Chemical Vapor Deposition of Manganese on Low-k Dielectrics for Copper Diffusion Barrier Application-Reference-Cited by-同舟云学术

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Plasma Enhanced Chemical Vapor Deposition of Manganese on Low-k Dielectrics for Copper Diffusion Barrier Application

Published:2012-12-18 Issue:3 Volume:2 Page:P25-P27
ISSN:2162-8742
Container-title:ECS Solid State Letters
language:en
Short-container-title:ECS Solid State Letters

Author:

Jourdan N.,Barbarin Y.,Croes K.,Kong Siew Y.,Van Elshocht S.,Tokei Z.,Vancoille E.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. (tBuN)SiMe2NMe2—A new N,N′-κ2-monoanionic ligand for atomic layer deposition precursors;Journal of Vacuum Science & Technology A;2021-05

2. Heteroleptic manganese compounds as potential precursors for manganese based thin films and nanomaterials;RSC Advances;2020

3. Reliability Enhancement of Copper/Porous SiOCH Metallization Systems Using Nitrogen Stuffing and Bias-Filter Sputter Deposited Mn2O3 Barrier;ECS Journal of Solid State Science and Technology;2019

4. A 2-nm-Thick Mn Oxide on a Nitrogen-Stuffed Porous Carbon-Doped Organosilica as a Barrier of Cu Films;ECS Journal of Solid State Science and Technology;2018

5. An aminopyridinato Mn(ii) compound as a novel CVD precursor for manganese-containing films;New Journal of Chemistry;2018

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