Effects on Annealing Temperature for Solution-Processed IZTO TFTs by Nitrogen Incorporation-Reference-Cited by-同舟云学术

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Effects on Annealing Temperature for Solution-Processed IZTO TFTs by Nitrogen Incorporation

Published:2010 Issue:12 Volume:13 Page:H419
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Kim Bong-Jin,Kim Hyung-Jun,Yoon Tae-Sik,Kim Yong-Sang,Lee Hyun Ho

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference15 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

3. A General Route to Printable High-Mobility Transparent Amorphous Oxide Semiconductors

4. Inkjet printed high-mobility indium zinc tin oxide thin film transistors

5. Solution-Processed Indium-Zinc Oxide Transparent Thin-Film Transistors

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1. A combinatorial study on ZnO-In2O3-SnO2 system: The effects of different postgrowth annealing conditions on optical and electrical properties;Journal of Alloys and Compounds;2022-11

2. Rational design of hydrogen and nitrogen co-doped ZnO for high performance thin-film transistors;Applied Physics Letters;2021-03-22

3. Rapid thermal annealing effect of transparent ITO source and drain electrode for transparent thin film transistors;Ceramics International;2021-02

4. Effect of nitrogen-doping on drain current modulation characteristics of an indium-gallium-zinc oxide thin-film transistor;Nanotechnology;2020-04-09

5. Annealing temperature effects on the structural and electrical properties of N-doped In-Zn-Sn-O thin film transistors;Journal of Alloys and Compounds;2019-09

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