High Performance Nano Device with Reduced Short Channel Effects in High Temperature Applications-Reference-Cited by-同舟云学术

High Performance Nano Device with Reduced Short Channel Effects in High Temperature Applications

Published:2017 Issue:7 Volume:6 Page:M75-M78
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Zareiee Meysam^ORCID

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Saremi M. Ebrahimi B. Afzali-Kusha A. , IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), 1 (2010).

2. Rajabi S. Orouji A. A. Moghadam H. A. Mahabadi S. E. J. Fathipour M. , International conference on Signal Processing, Communication, Computing and Networking Technologies (ICSCCN), 269 (2011).

3. A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement

4. A new nanoscale and high temperature field effect transistor: Bi level FinFET

5. Improved Device Performance in Nano Scale Transistor: An Extended Drain SOI MOSFET

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