InGaAs MOS Transistors Fabricated through a Digital-Etch Gate-Recess Process and the Influence of Forming Gas Anneal on Their Electrical Behavior-Reference-Cited by-同舟云学术

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InGaAs MOS Transistors Fabricated through a Digital-Etch Gate-Recess Process and the Influence of Forming Gas Anneal on Their Electrical Behavior

Published:2012 Issue:6 Volume:1 Page:P310-P314
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Alian Alireza,Merckling Clement,Brammertz Guy,Meuris Marc,Heyns Marc,Meyer Kristin De

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Enhancement-Mode Buried-Channel $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As/In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$ MOSFETs With High- $\kappa$ Gate Dielectrics

2. Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

3. High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

4. Sun Y. Kiewra E. de Souza J. Bucchignano J. Fogel K. Sadana D. Shahidi G. , IEEE International Electron Device Meeting, 2008, pp. 1–4.

5. Performance enhancement of n-channel inversion type InxGa1−xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer

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1. Low etching damage surface obtained by a mixed etching method and the influence of surface states on the C–V characteristics of AlGaN/GaN Schottky barrier diodes;Materials Science in Semiconductor Processing;2022-08

2. Atomic Layer Processes for Material Growth and Etching—A Review;IEEE Transactions on Semiconductor Manufacturing;2021-11

3. The Role of III-V Substrate Roughness and Deoxidation Induced by Digital Etch in Achieving Low Resistance Metal Contacts;Crystals;2017-06-19

4. Alcohol-Based Digital Etch for III–V Vertical Nanowires With Sub-10 nm Diameter;IEEE Electron Device Letters;2017-05

5. Magnesium doping in InAlAs and InGaAs/Mg films lattice-matched to InP grown by MOVPE;Journal of Nanoparticle Research;2017-01

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