Direct Copper Electrochemical Deposition on Ru-Based Substrates for Advanced Interconnects Target 30 nm and ½ Pitch Lines: From Coupon to Full-Wafer Experiments

Author:

Armini S.,El-Mekki Z.,Swerts J.,Nagar M.,Demuynck S.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Wet Chemical Processes for BEOL Technology;Springer Handbook of Semiconductor Devices;2022-11-11

2. Copper chemical mechanical planarization (Cu CMP) challenges in 22 nm back-end-of-line (BEOL) and beyond;Advances in Chemical Mechanical Planarization (CMP);2022

3. Demonstration of CMOS-Compatible Multi-Level Graphene Interconnects With Metal Vias;IEEE Transactions on Electron Devices;2021-04

4. Chemical Interactions and Mechanisms of Different pH Regulators on Copper and Cobalt Removal Rate of Copper Film CMP for GLSI;ECS Journal of Solid State Science and Technology;2019

5. High sensitivity Rutherford backscattering spectrometry using multidetector digital pulse processing;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2018-03

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