Study of the Intrinsic Limitations of the Contact Resistance of Metal/Semiconductor Interfaces through Atomistic Simulations-Reference-Cited by-同舟云学术

Study of the Intrinsic Limitations of the Contact Resistance of Metal/Semiconductor Interfaces through Atomistic Simulations

Published:2018 Issue:6 Volume:7 Page:N73-N80
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Dabral A.^ORCID,Pourtois G.,Sankaran K.,Magnus W.,Yu H.^ORCID,de Jamblinne de Meux A.,Lu A. K. A.,Clima S.,Stokbro K.,Schaekers M.,Collaert N.,Horiguchi N.,Houssa M.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference30 articles.

1. TiSi(Ge) Contacts Formed at Low Temperature Achieving Around $2 \,\, \times \,\, 10^{-{9}}~\Omega $ cm2 Contact Resistivities to p-SiGe

2. Sub- $10^{-9}~\Omega $ -cm2 n-Type Contact Resistivity for FinFET Technology

3. Lower limits to metal-semiconductor contact resistance: Theoretical models and experimental data

4. Atomistix ToolKit version 2016.1, QuantumWise A/S (www.quantumwise.com).

5. Density-functional method for nonequilibrium electron transport

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