Low temperature source/drain epitaxy and functional silicides: essentials for ultimate contact scaling
Author:
Porret C.1, Everaert J.-L.1, Schaekers M.1, Ragnarsson L.-A.1, Hikavyy A.1, Rosseel E.1, Rengo G.1, Loo R.1, Khazaka R.2, Givens M.2, Piao X.1, Mertens S.1, Heylen N.1, Mertens H.1, De Carvalho Cavalcante C. Toledo1, Sterckx G.1, Brus S.1, Mehta A. Nalin1, Korytov M.1, Batuk D.1, Favia P.1, Langer R.1, Pourtois G.1, Swerts J.1, Litta E. Dentoni1, Horiguchi N.1
Affiliation:
1. Imec,Leuven,Belgium 2. ASM,Leuven,Belgium
Cited by
2 articles.
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1. Materials Innovation;75th Anniversary of the Transistor;2023-07-03 2. Investigation of ultrathin yttrium silicide for NMOS source/drain contacts;Journal of Materials Science: Materials in Electronics;2023-05
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