Removal of Fluorocarbon Residues on CF 4 / H 2 Reactive‐Ion‐Etched Silicon Surfaces Using a Hydrogen Plasma-Reference-Cited by-同舟云学术

Removal of Fluorocarbon Residues on CF 4 / H 2 Reactive‐Ion‐Etched Silicon Surfaces Using a Hydrogen Plasma

Published:1991-01-01 Issue:1 Volume:138 Page:277-284
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Simko J. P.¹²,Oehrlein G. S.¹²,Mayer T. M.¹²

Affiliation:

1. IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598

2. Department of Chemistry, University of North Carolina, Chapel Hill, North Carolina 27599‐3290

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2085555/pdf

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