Author:
Laboutin Oleg,Cao Yu,Wang Ronghua,Li Guowang,Jena Debdeep,Xing H.,Lo Chien-Fong,Liu Lu,Pearton S. J.,Ren F.,Johnson Wayne
Abstract
Heterostructure devices based on the AlInN material system have demonstrated unprecedented high frequency performance but are still limited by materials issues. Likewise, improved crystal growth schemes are envisioned as a key component in the realization of GaN-on-Si high voltage devices for power electronics applications. This work presents materials optimization results from MOCVD growth of quaternary barrier AlInGaN/AlN/GaN HEMTs formed on sapphire and SiC substrates and also a study of AlN nucleation and subsequent GaN growth for crack-free films on silicon (111).
Publisher
The Electrochemical Society
Cited by
3 articles.
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