Electrical Properties of Sol-Gel Derived PbLaZrTiOx Capacitors with Nonnoble Metal Oxide Top Electrodes-Reference-Cited by-同舟云学术

Electrical Properties of Sol-Gel Derived PbLaZrTiOx Capacitors with Nonnoble Metal Oxide Top Electrodes

Published:2013-04-01 Issue:34 Volume:50 Page:43-48
ISSN:1938-5862
Container-title:ECS Transactions
language:
Short-container-title:ECS Trans.

Author:

Takada Yoko,Tsuji Toru,Okamoto Naoki,Saito Takeyasu,Kondo K.,Yoshimura Takeshi,Fujimura Norifumi,Higuchi Koji,Kitajima Akira,Oshima Akihiro

Abstract

PbLaZrTiOx(PLZT) thin films were fabricated on Pt(111) substrateby the sol-gel method for ferroelectric capacitors. Pt top electrodeswere deposited by sputtering, aluminum-doped zinc oxide (AZO)or indium tin oxide (ITO) top electrodes were deposited by pulsedlaser deposition (PLD) on PLZT capacitors. We compared bothdegradation characteristics by annealing in 200°C, 1Torr, 3%hydrogen atmosphere and fatigue properties, exhibited the PLZTcapacitors with AZO and ITO top electrodes has better propertiescompared to the PLZT capacitors with Pt top electrodes.

Publisher

The Electrochemical Society

Link

https://iopscience.iop.org/article/10.1149/05034.0043ecst/pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication and electrical properties of a (Pb,La)(Zr,Ti)O3capacitor with pulsed laser deposited Sn-doped In2O3bottom electrode on Al2O3(0001);Japanese Journal of Applied Physics;2017-06-22

2. Effect of excess Pb on ferroelectric characteristics of conductive Al-doped ZnO and Sn-doped In2O3 top electrodes in PbLaZrTiO x capacitors;International Journal of Materials Research;2015-01-07

3. Improved reliability properties of (Pb,La)(Zr,Ti)O 3 ferroelectric capacitors by thin aluminium‐doped zinc oxide buffer layer;Electronics Letters;2014-05

4. Aluminum-doped zinc oxide electrode for robust (Pb,La)(Zr,Ti)O3 capacitors: effect of oxide insulator encapsulation and oxide buffer layer;Journal of Materials Science: Materials in Electronics;2014-03-12