Effect of excess Pb on ferroelectric characteristics of conductive Al-doped ZnO and Sn-doped In2O3 top electrodes in PbLaZrTiO x capacitors

Author:

Takada Yoko1,Tsuji Toru1,Okamoto Naoki1,Saito Takeyasu1,Kondo Kazuo1,Yoshimura Takeshi2,Fujimura Norifumi2,Higuchi Koji3,Kitajima Akira3,Oshima Akihiro3

Affiliation:

1. Dept. of Chem. Eng. , Osaka Pref. Univ., Sakai , Japan

2. Dept. of Phys. Electro. , Osaka Pref. Univ., Sakai , Japan

3. Inst. of Sci. and Ind. Res. , Osaka Univ., Ibaraki , Japan

Abstract

Abstract The Pb content effect of chemical solution deposited lanthanum-doped lead zirconate titanate (PLZT) (Pb:La:Zr:Ti = Pb:3:30:70, Pb = 105∼117) was studied for conductive aluminum-doped zinc oxide (AZO) and tin-doped indium oxide (ITO) deposited as top electrodes by means of pulsed laser deposition. The crystallinity, surface morphology, ferroelectric properties and hydrogen degradation resistance of the ITO/PLZT/Pt and AZO/PLZT/Pt capacitors were evaluated. All the PLZT films showed perovskite phase (revealed by X-ray diffraction patterns) and showed similar surface morphology and grain size (revealed by scanning electron microscopy images). PLZT capacitors with a Pb content of 113 exhibited the largest remnant polarization (at 15 V (300 kV cm 1)), however, the difference in hydrogen degradation resistance was small between the four levels of Pb content.

Publisher

Walter de Gruyter GmbH

Subject

Materials Chemistry,Metals and Alloys,Physical and Theoretical Chemistry,Condensed Matter Physics

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