Improved reliability properties of (Pb,La)(Zr,Ti)O 3 ferroelectric capacitors by thin aluminium‐doped zinc oxide buffer layer-Reference-Cited by-同舟云学术

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Improved reliability properties of (Pb,La)(Zr,Ti)O 3 ferroelectric capacitors by thin aluminium‐doped zinc oxide buffer layer

Published:2014-05 Issue:11 Volume:50 Page:799-801
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Takada Y.¹,Tsuji T.¹,Okamoto N.¹,Saito T.¹,Kondo K.¹,Yoshimura T.²,Fujimura N.²,Higuchi K.³,Kitajima A.³

Affiliation:

1. Department of Chemical EngineeringOsaka Prefecture UniversitySakai599‐8531OsakaJapan

2. Department of Physics and ElectronicsOsaka Prefecture UniversitySakai599‐8531OsakaJapan

3. Institute of Science and Industrial Research, Osaka UniversityOsaka567‐0047Japan

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2014.0187

Reference19 articles.

1. Ferroelectric non‐volatile memories for low‐voltage, low‐power applications;Jones R.E.;Thin Solid Films,1995

2. Ferroelectric thin films: Review of materials, properties, and applications

3. Integration technology for ferroelectric memory devices

4. Non-volatile memory technologies: emerging concepts and new materials

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Al:ZnO top electrodes deposited with various oxygen pressures for ferroelectric (Pb,La)(Zr,Ti)O 3 capacitors;Electronics Letters;2016-02

2. Effect of Al-doped ZnO or Sn-doped In2O3electrode on ferroelectric properties of (Pb,La)(Zr,Ti)O3capacitors;Japanese Journal of Applied Physics;2015-04-08

3. The effect of H2 distribution in (Pb,La)(Zr,Ti)O3 capacitors with conductive oxide electrodes on the degradation of ferroelectric properties;MRS Proceedings;2015

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