Improved Barrier and Adhesion Properties in Sputtered TaSiN Layer for Copper Interconnects-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Improved Barrier and Adhesion Properties in Sputtered TaSiN Layer for Copper Interconnects

Published:2002 Issue:5 Volume:5 Page:G36
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Hara Tohru,Yoshida Yuichi,Toida Hiroki

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference8 articles.

1. Diffusion barrier property of TaN between Si and Cu

2. Barrier Properties of Very Thin Ta and TaN Layers Against Copper Diffusion

3. Tantalum‐based diffusion barriers in Si/Cu VLSI metallizations

4. Barrier Effect of TaSiN Layer for Oxygen Diffusion

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent Advances in Barrier Layer of Cu Interconnects;Materials;2020-11-09

2. Characterization of Copper Diffusion in Through Silicon Vias;Materials for Advanced Packaging;2016-11-19

3. Improved Diffusion Barrier Properties and NiSi Thermal Stability for the Cu Contact with the Ru/TaSiN Stack on NiSi/Si;ECS Solid State Letters;2012-10-22

4. Properties of TaSiN thin films deposited by reactive radio frequency magnetron sputtering;Thin Solid Films;2012-04

5. Diffusion Barriers;Advanced Interconnects for ULSI Technology;2012-02-17

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP