Improved Diffusion Barrier Properties and NiSi Thermal Stability for the Cu Contact with the Ru/TaSiN Stack on NiSi/Si-Reference-Cited by-同舟云学术

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Improved Diffusion Barrier Properties and NiSi Thermal Stability for the Cu Contact with the Ru/TaSiN Stack on NiSi/Si

Published:2012-10-22 Issue:1 Volume:2 Page:P1-P3
ISSN:2162-8742
Container-title:ECS Solid State Letters
language:en
Short-container-title:ECS Solid State Letters

Author:

Qu X.-P.,Zhang X.-M.,Zhao Y.,Deng S.-R.,Detavernier C.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth, stability and decomposition of Mg2Si ultra-thin films on Si (100);Applied Surface Science;2018-01

2. Epitaxial nickel disilicide with low resistivity and excellent reliability;Nanotechnology;2016-01-12

3. Epitaxial silicides: the case of Fe, Ni, and Ti;CrystEngComm;2016

4. Tungsten-Doped Indium Oxide Thin Film as an Effective High-Temperature Copper Diffusion Barrier;ECS Solid State Letters;2014-04-15

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