Application of Flash Lamp Annealing on Nitrogen-Doped Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors-Reference-Cited by-同舟云学术

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Application of Flash Lamp Annealing on Nitrogen-Doped Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

Published:2017 Issue:12 Volume:6 Page:P778-P785
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Kim Yoonsuk,Kim Jinsoo,Kim Byungkuk,Kim Hyoung June,Kim Seok,Choi Eunsoo,Hwang Jin-Ha,Park Seungho

Funder

Ministry of Education (Ministry of Education of the Republic of Korea)

Ministry of Science, ICT and Future Planning (MSIP)

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference47 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. 3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array

3. Amorphous-oxide TFT backplane for large-sized AMOLED TVs

4. ZnO-based transparent thin-film transistors

5. Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A review on intense pulsed light process as post-treatment for metal oxide thin films and nanostructures for device application;Nanotechnology;2022-04-20

2. Beyond Semiconductors;Flash Lamp Annealing;2019

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