Beyond Semiconductors
Author:
Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-030-23299-3_5
Reference184 articles.
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3. S. Kamiyama, T. Miura, Y. Nara, Ultrathin HfO2 films treated by xenon flash lamp annealing for use as transistor gate dielectric replacements. Electrochem. Solid-State Lett. 8(12), G367 (2005). https://doi.org/10.1149/1.2119584
4. H. Kawarazaki, A. Ueda, M. Furukawa, T. Aoyama, S. Kato, I. Kobayashi, new flash lamp annealing tool equipped with an ambient control feature suitable for high-k gate stack anneals, in 21st International Conference Ion Implantation Technology (2016)
5. T. Matsuki et al., Area-selective post-deposition annealing process using flash lamp and Si photoenergy absorber for metal/high-kgate metal–insulator–semiconductor field-effect transistors with NiSi source/drain. Jpn. J. Appl. Phys. 45(4B), 2939–2944 (2006). https://doi.org/10.1143/jjap.45.2939
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