1. K. Ueno, M. Suzuki, A. Matsumoto, K. Motoyama, T. Tonegawa, N. Ito, K. Arita, Y. Tsuchiya, T. Wake, A. Kubo, K. Sugai, N. Oda, H. Miyamoto, and S. Satio,Tech. Dig. - Int. Electron Devices Meet.,2000, 265.
2. M. H. Tsai, W. J. Tsai, S. L. Shue, C. H. Yu, and M. S. Liang, inProceedings of the 2000 International Interconnect Technology Conference, IEEE, p. 214 (2000).
3. Microstructure and reliability of copper interconnects
4. M. H. Tsai, R. Augur, V. Blaschke, R. H. Havemann, E. F. Ogawa, P. S. Ho, W. K. Yeh, S. L. Shue, C. H. Yu, and M. S. Liang, inProceedings of the 2001 International Interconnect Technology Conference, IEEE (2001).
5. Electromigration reliability issues in dual-damascene Cu interconnections