Stabilized copper plating method by programmed electroplated current: Accumulation of densely packed copper grains in the interconnect-Reference-Cited by-同舟云学术

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Stabilized copper plating method by programmed electroplated current: Accumulation of densely packed copper grains in the interconnect

Published:2016-12 Issue: Volume:388 Page:228-233
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kao Li-Chi,Hsu Li-Hsuan,Brahma Sanjaya,Huang Bo-Chia,Liu Chun-Chu,Lo Kuang-Yao^ORCID

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference28 articles.

1. Mechanism for Cu void defect on various electroplated film conditions;Feng;Thin Solid Films,2006

2. Linewidth dependence of grain structure and stress in damascene Cu lines;Paik;J. Appl. Phys.,2006

3. Stress migration and electromigration improvement for copper dual damascene interconnection;Wang;J. Electrochem. Soc.,2005

4. Isothermal stress relaxation in electroplated Cu films. I. Mass transport measurements;Gan;J. Appl. Phys.,2005

5. Z. Suo, Comprehensive Structural Integrity, Chapter 8.08, Pages 265-324 (2007).

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